irfr/u5410 hexfet ? power mosfet v dss = -100v r ds(on) = 0.205 w i d = -13a 5/3/99 parameter typ. max. units r q jc junction-to-case ??? 1.9 r q ja junction-to-ambient (pcb mount)** ??? 50 c/w r q ja junction-to-ambient ??? 110 thermal resistance d-pak to-252aa i-pak to-251aa l ultra low on-resistance l p-channel l surface mount (IRFR5410) l straight lead (irfu5410) l advanced process technology l fast switching l fully avalanche rated description parameter max. units i d @ t c = 25c continuous drain current, v gs @ -10v -13 i d @ t c = 100c continuous drain current, v gs @ -10v -8.2 a i dm pulsed drain current ? -52 p d @t c = 25c power dissipation 66 w linear derating factor 0.53 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy ? 194 mj i ar avalanche current ? -8.4 a e ar repetitive avalanche energy ? 6.3 mj dv/dt peak diode recovery dv/dt ? -5.0 v/ns t j operating junction and -55 to + 150 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c absolute maximum ratings fifth generation hexfets from international rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. this benefit, combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. the d-pak is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. the straight lead version (irfu series) is for through-hole mounting applications. power dissipation levels up to 1.5 watts are possible in typical surface mount applications. s d g pd - 9.1533a www.irf.com 1
irfr/u5410 2 www.irf.com source-drain ratings and characteristics parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source current integral reverse (body diode) ? ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? -1.6 v t j = 25c, i s = -7.8a, v gs = 0v ? t rr reverse recovery time ??? 130 190 ns t j = 25c, i f = -8.4a q rr reverse recovery charge ??? 650 970 nc di/dt = 100a/s ?? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) -13 -52 a notes: ** when mounted on 1" square pcb (fr-4 or g-10 material ) . for recommended footprint and soldering techniques refer to application note #an-994 ? this is applied for i-pak, l s of d-pak is measured between lead and center of die contact ? starting t j = 25c, l = 6.4mh r g = 25 w , i as = -7.8a. (see figure 12) ? repetitive rating; pulse width limited by max. junction temperature. ( see fig. 11 ) ? i sd -7.8a, di/dt 200a/s, v dd v (br)dss , t j 150c ? pulse width 300s; duty cycle 2%. s d g parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage -100 ??? ??? v v gs = 0v, i d = -250a d v (br)dss / d t j breakdown voltage temp. coefficient ??? -0.12 ??? v/c reference to 25c, i d = -1.0ma r ds(on) static drain-to-source on-resistance ??? ??? 0.205 w v gs = -10v, i d = -7.8a ? v gs(th) gate threshold voltage -2.0 ??? -4.0 v v ds = v gs , i d = -250a g fs forward transconductance 3.2 ??? ??? s v ds = -50v, i d = -7.8a ??? ??? -25 a v ds = -100v, v gs = 0v ??? ??? -250 v ds = -80v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v q g total gate charge ??? ??? 58 i d = -8.4a q gs gate-to-source charge ??? ??? 8.3 nc v ds = -80v q gd gate-to-drain ("miller") charge ??? ??? 32 v gs = -10v, see fig. 6 and 13 ?? t d(on) turn-on delay time ??? 15 ??? v dd = 50v t r rise time ??? 58 ??? i d = -8.4a t d(off) turn-off delay time ??? 45 ??? r g = 9.1 w t f fall time ??? 46 ??? r d =6.2 w, see fig. 10 ?? between lead, ??? ??? 6mm (0.25in.) from package and center of die contact ? c iss input capacitance ??? 760 ??? v gs = 0v c oss output capacitance ??? 260 ??? pf v ds = -25v c rss reverse transfer capacitance ??? 170 ??? ? = 1.0mhz, see fig. 5 ? nh electrical characteristics @ t j = 25c (unless otherwise specified) l d internal drain inductance l s internal source inductance ??? ??? i gss ns 4.5 7.5 i dss drain-to-source leakage current s d g ? uses irf9530n data and test conditions.
irfr/u5410 www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs -15v -10v -8.0v -7.0v -6.0v -5.5v -5.0v -4.5v -v , drain-to-source voltage (v) -i , drain-to-source current (a) ds d -4.5v 0.1 1 10 100 4 5 6 7 8 9 10 v = 10v 20s pulse w idth ds -v , gate-to-source voltage (v) -i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d -10v -14a
irfr/u5410 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0.1 1 10 100 0.2 0.8 1.4 2.0 2.6 -v ,source-to-drain voltage (v) -i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0 400 800 1200 1600 2000 1 10 100 c, capacitance (pf) a ds -v , drain-to-source voltage (v) v = 0v, f = 1mhz c = c + c , c shorted c = c c = c + c gs iss gs gd ds rss gd oss ds gd c iss c oss c rss 0 10 20 30 40 50 60 0 5 10 15 20 q , total gate charge (nc) -v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 -8.4a v = -20v ds v = -50v ds v = -80v ds 1 10 100 1000 1 10 100 1000 operation in this area limited by r ds(on) single pulse t t = 150 c = 25 c j c -v , drain-to-source voltage (v) -i , drain current (a) i , drain current (a) ds d 10us 100us 1ms 10ms
irfr/u5410 www.irf.com 5 fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature fig 10a. switching time test circuit fig 10b. switching time waveforms v ds -10v pulse width 1 s duty factor 0.1 % r d v gs v dd r g d.u.t. + - v ds 90% 10% v gs t d(on) t r t d(off) t f 25 50 75 100 125 150 0 3 6 9 12 15 t , case temperature ( c) -i , drain current (a) c d 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
irfr/u5410 6 www.irf.com fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current q g q gs q gd v g charge -10v d.u.t. v ds i d i g -3ma v gs .3 m f 50k w .2 m f 12v current regulator same type as d.u.t. current sampling resistors + - fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v ( br ) dss i as r g i as 0.01 w t p d.u.t l v ds v dd driver a 15v -20v - + v dd 25 50 75 100 125 150 0 100 200 300 400 500 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom -3.5a -4.9a -7.8a
irfr/u5410 www.irf.com 7 peak diode recovery dv/dt test circuit p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - ? ? ? r g v dd dv/dt controlled by r g i sd controlled by duty factor "d" d.u.t. - device under test d.u.t * circuit layout considerations low stray inductance ground plane low leakage inductance current transformer ? * reverse polarity of d.u.t for p-channel v gs [ ] [ ] *** v gs = 5.0v for logic level and 3v drive devices [ ] *** fig 14. for p-channel hexfets
irfr/u5410 8 www.irf.com package outline to-252aa outline dimensions are shown in millimeters (inches) to-252aa (d-pak) part marking information 6.73 (.265) 6.35 (.250) - a - 4 1 2 3 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 4.57 (.180) 2.28 (.090) 2x 1.14 (.045) 0.76 (.030) 1.52 (.060) 1.15 (.045) 1.02 (.040) 1.64 (.025) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) 0.51 (.020) min. 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain 10.42 (.410) 9.40 (.370) notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before solder dip, solder dip max. +0.16 (.006). international rectifier logo assembly lot code example : this is an irfr120 with assembly lot code 9u1p first portion of part number second portion of part number 120 irfr 9u 1p a
irfr/u5410 www.irf.com 9 package outline to-251aa outline dimensions are shown in millimeters (inches) to-251aa (i-pak) part marking information international rectifier logo assembly lot code first portion of part numbe r second portion of part number 120 9u 1p example : this is an irfu120 with assembly lot code 9u1p irfu 6.73 (.265) 6.35 (.250) - a - 6.22 (.245) 5.97 (.235) - b - 3x 0.89 (.035) 0.64 (.025) 0.25 (.010) m a m b 2.28 (.090) 1.14 (.045) 0.76 (.030) 5.46 (.215) 5.21 (.205) 1.27 (.050) 0.88 (.035) 2.38 (.094) 2.19 (.086) 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) lead assignments 1 - gate 2 - drain 3 - source 4 - drain notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 2 controlling dimension : inch. 3 conforms to jedec outline to-252aa. 4 dimensions shown are before solder dip, solder dip max. +0.16 (.006). 9.65 (.380) 8.89 (.350) 2x 3x 2.28 (.090) 1.91 (.075) 1.52 (.060) 1.15 (.045) 4 1 2 3 6.45 (.245) 5.68 (.224) 0.58 (.023) 0.46 (.018)
irfr/u5410 10 www.irf.com tape & reel information to-252aa tr 16.3 ( .641 ) 15.7 ( .619 ) 8.1 ( .318 ) 7.9 ( .312 ) 12.1 ( .476 ) 11.9 ( .469 ) feed direction feed direction 16.3 ( .641 ) 15.7 ( .619 ) trr trl notes : 1. controlling dimension : millimeter. 2. all dimensions are shown in millimeters ( inches ). 3. outline conforms to eia-481 & eia-541. notes : 1. outline conforms to eia-481. 16 mm 13 inch world headquarters: 233 kansas st., el segundo, california 90245, tel: (310) 322 3331 ir great britain: hurst green, oxted, surrey rh8 9bb, uk tel: ++ 44 1883 732020 ir canada: 15 lincoln court, brampton, ontario l6t3z2, tel: (905) 453 2200 ir germany: saalburgstrasse 157, 61350 bad homburg tel: ++ 49 6172 96590 ir italy: via liguria 49, 10071 borgaro, torino tel: ++ 39 11 451 0111 ir far east: k&h bldg., 2f, 30-4 nishi-ikebukuro 3-chome, toshima-ku, tokyo japan 171 tel: 81 3 3983 0086 ir southeast asia: 1 kim seng promenade, great world city west tower, 13-11, singapore 237994 tel: ++ 65 838 4630 ir taiwan: 16 fl. suite d. 207, sec. 2, tun haw south road, taipei, 10673, taiwan tel: 886-2-2377-9936 http://www.irf.com/ data and specifications subject to change without notice. 8/98
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